Resistive Switching Memory (RRAM)

Synaptic device based on resistive switching memory using nanomaterials

Synaptic device based on resistive switching memory using new nanomaterials deposits single-walled carbon nanotubes on the existing metal-insulator-metal (MIM) structure, which is a memristor structure, with CNT dip-coater equipment in the laboratory. Therefore, a synaptic mimicking device is implemented through a metal-oxide-carbon nanotubes-Si (MOCS)-based memristor, which is a novel structure using a new material.

1D - nanomaterual utilization and application

A memristor with a low driving voltage is realized by applying 1D nanomaterial technology, and a low-power synaptic device is developed by blocking the leakage current of the synaptic array based on heterogeneous junctions of semiconductor nanomaterials. Accordingly, by using 1D nanomaterials, it is possible to implement new structures such as a pyramid structure that concentrates an electric field, a 3D stack structure, and a three-terminal memristor, and develop a low-power, high-integration structure.