Our research group pursues innovation of hybrid CMOS neuron circuits that integrate new nanomaterial-based materials, novel structures of low-power synaptic devices, and positive feedback FETs, which are super-power switching devices, with CMOS. Therefore, we intend to develop a low-power synaptic device by implementing a low driving voltage memristor based on the heterojunction of semiconductor nanomaterials and applying nanomaterial technology to block the leakage current of the synaptic array. By integrating a high-speed switching device into CMOS, a new neuron circuit has been realized by overcoming the physical limitations of CMOS. In all cases, we often pursue new initiatives in engineering materials, new processing and new device architectures at unmatched levels.