Publication

Journal

[14] Junhyeong Lee, and Min-Woo Kwon. "Positive feedback field effect transistor based on vertical NAND flash structure for in-memory computing." Japanese Journal of Applied Physics (2023).
[13] 임창영, 김연석, and 권민우. "계면 트랩에 기반한 BCAT 구조 DRAM 의 로우 해머 분석." 전기전자학회논문지 27.3 (2023): 220-224.
[12] Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon. "Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM." Journal of IKEEE 27.3 (2023): 220-224.
[11] DongJun Jang, and Min-Woo Kwon. "Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays." Electronics 12.22 (2023): 4650.
[10] Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 295-302.
[9] DongJun Jang, U Jin Jo, Youhyeong Jeon, TaeYong Lee, RyangHa Kim, YoungLae Kim, and Min-Woo Kwon. "Resistive Hydrogen Detection Sensors based on 2 Dimensions–Molybdenum Disulfide Decorated by Palladium Nanoparticles." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 258-264.
[8] U Jin Jo, DongJun Jang, Youhyeong Jeon, Taeha Kim, YoungLae Kim, and Min-Woo Kwon. "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature." Applied Sciences 13.19 (2023): 10594.
[7] Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.4 (2023): 236-242.
[6] Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance." 2023 Silicon Nanoelectronics Workshop (SNW). IEEE, 2023.
[5] Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor." Applied Sciences 13.4 (2023): 2628.
[4] DongJun Jang, Beomso Jo, YoungLae Kim, and Min-Woo Kwon. "ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode." 2023 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2023.
[3] Chang Young Lim, and Min-Woo Kwon. "Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.6 (2022): 452-458.
[2] 장동준, 권민우 "단일 벽 탄소 나노 튜브를 이용한 스위칭 레이어Al2O3/HfOx 기반의 멤리스터" 전기전자학회논문지 26.4 pp.633-638 (2022) : 633.
[1] DongJun Jang, HyunWoo Ryu, HyeonJin Cha, Na-young Lee, YoungLae Kim, and Min-Woo Kwon. "Synaptic Device based on Resistive Switching Memory using Single-walled Carbon Nanotubes." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.5 (2022): 346-352.

Conference

[24] DongJun Jang, and Min-Woo Kwon "Self-rectifying Resistive Random-Access Memory based on Molybdenum disulfide for Low Power Synapse Array," IEEE seoul section, Seoul, Korea Dec. 2, 2023.
[23] Yeon Seok Kim, and Min-Woo Kwon "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance," IEEE seoul section, Seoul, Korea Dec. 2, 2023.
[22] U Jin Jo, DongJun Jang, Youhyeong Jeon, TaeHa Kim and Min-Woo Kwon "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature," IEEE seoul section, Seoul, Korea Dec. 2, 2023.
[21] Junhyeong Lee, Misun Cha, and Min-Woo Kwon "Positive Feedback Field Effect Transistor Based on Vertical NAND Flash Structure for In-Memory Computing," International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sep. 5-8, 2023.
[20] DongJun Jang, and Min-Woo Kwon "Two-electrode RRAM Device for Memristive Behavior Using Nanostructured Materials Application," Conference on Electronics, Semiconductor, and AI, Gangneung, Korea, Aug. 10, 2023.
[19] Youhyeong Jeon, and Min-Woo Kwon "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature," Conference on Electronics, Semiconductor, and AI, Gangneung, Korea, Aug. 10, 2023.
[18] Hee Su Kim, Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon "Development of 2T DRAM Array for In-Memory Computing Implementation," Conference on Electronics, Semiconductor, and AI, Gangneung, Korea, Aug. 10, 2023.
[17] Junhyeong Lee, and Min-Woo Kwon "Feedback Field Effect Transistor Based on Charge Trap Flash Structure for In Memory Computing," Conference on Electronics, Semiconductor, and AI, Gangneung, Korea, Aug. 10, 2023.
[16] Yeon Seok Kim, and Min-Woo Kwon "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance," Conference on Electronics, Semiconductor, and AI, Gangneung, Korea, Aug. 10, 2023.
[15] Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon "Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM," Conference on Electronics, Semiconductor, and AI, Gangneung, Korea, Aug. 10, 2023.
[14] Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon "Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Yokohama, Japan, Jul. 10-11, 2023.
[13] U Jin Jo, DongJun Jang, Youhyeong Jeon, TaeHa Kim, and Min-Woo Kwon "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature," Nano Korea, Kintex, Ilsan, Korea, Jul. 5-7, 2023.
[12] Yeon Seok Kim, Chang Young Lim, and Min-Woo Kwon "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance," Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, Jun. 11-12, 2023.
[11] TaeYong Lee, DongJun Jang, U Jin Jo, Youhyeong Jeon, and Min-Woo Kwon "FET-type Chemiresistive Low-Power, High-Sensistivity Hydrogen Sensor Based on Nanomaterials," Korean Conference on Semiconductors (KCS), Korea, Feb. 13-15, 2023.
[10] DongJun Jang, Junhyeong Lee, Misun Cha, and Min-Woo Kwon "Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory," International Conference on Electronics, Information and Communication (ICEIC), Singapore, Feb. 5-8, 2023.
[9] DongJun Jang, Beomso Jo, YoungLae Kim, and Min-Woo Kwon "ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode," International Conference on Electronics, Information and Communication (ICEIC), Singapore, Feb. 5-8, 2023.
[8] Junhyeong Lee, Misun Cha, and Min-Woo Kwon "Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory," IEEE seoul section, Seoul, Korea Dec, 2022.
[7] Chang Young Lim, and Min-Woo Kwon "Multi-Gate BCAT Structure and Select Word-Line Driver in DRAM for Reduction of GIDL," IEEE seoul section, Seoul, Korea, Dec, 2022.
[6] DongJun Jang, YoungLae Kim and Min-Woo Kwon "Memristor based on Al2O3/HfOx for switching layer using Single-Walled Carbon Nanotubes," Nano Korea, Kintex, Ilsan, Korea, Jul. 6-8, 2022.
[5] MisunCha, Junhyeong Lee, and Min-Woo Kwon "Re-configurable logic and memory device using multi-gate Feedback Field Effect Transistor," Nano Korea, Kintex, Ilsan, Korea, Jul. 6-8, 2022.
[4] YeonSeok Kim, ChangYoung Lim, and Min-Woo Kwon "Reduction of pass gate effect with spherical shallow trench isolation in BCAT structure," Nano Korea, Kintex, Ilsan, Korea, Jul. 6-8, 2022.
[3] ChangYoung Lim, and Min-Woo Kwon "Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL," Korean Conference on Semiconductors (KCS), Korea, Jan. 24-26, 2022.
[2] Junhyeong Lee, Misun Cha, and Min-Woo Kwon "Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor," Korean Conference on Semiconductors (KCS), Korea, Jan. 24-26, 2022.
[1] DonJun Jang, HyunWoo Ryu, HyeonJin Cha, Na-young Lee, YoungLae Kim, and Min-Woo Kwon "Synaptic Device based on Resistive Switching Memory Using Single-Walled Carbon Nanotubes," Korean Conference on Semiconductors (KCS), Korea, Jan. 24-26, 2022.